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The Centre for GaN Materials and Devices has internationally recognised expertise in the
field of III-nitride semiconductors
and devices. Our
research covers a broad spectrum
of III-nitride…
Optional Metadata - Department
Faculty of Engineering
Electronic and Electrical Engineering
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The Centre for GaN Materials and Devices has internationally recognised expertise in the
field of III-nitride semiconductors
and devices. Our
research covers a broad spectrum
of III-nitride…
Optional Metadata - Department
Faculty of Engineering
Electronic and Electrical Engineering
|
|
The Centre for GaN Materials and Devices has internationally recognised expertise in the
field of III-nitride semiconductors
and devices. Our
research covers a broad spectrum
of III-nitride…
Optional Metadata - Department
Faculty of Engineering
Electronic and Electrical Engineering
|
|
"Interferometric lithography (IL) has been used for many years in semiconductor nanofabrication, but has been little used for molecular nanopatterning. We have found that in combination with…
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