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Facilities at the Centre for GaN Materials and Devices
From Katherine Greenacre February 05, 2019 Created from The Centre for GaN Materials and Devices
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The Centre for GaN Materials and Devices has internationally recognised expertise in the
field of III-nitride semiconductors
and devices.
Our research covers a broad spectrum of III-nitride topics including photonics and electronics, epitaxial growth and novel nanofabrication of devices.
Find out about our research interests, facilities and opportunities for collaboration.
Our research covers a broad spectrum of III-nitride topics including photonics and electronics, epitaxial growth and novel nanofabrication of devices.
Find out about our research interests, facilities and opportunities for collaboration.
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